Microsemi Corp. Bipolar Transistors - BJT Jan2N2904A/TR

The Jan2N2904A/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) hermetically sealed package, designed for high-reliability and military applications. It has a collector-emitter voltage rating of 60 V, collector-base voltage of 60 V, and emitter-base voltage of 5.0 V, with a maximum collector current of 600 mA and total power dissipation of 300 mW at 25°C ambient. The device operates from -65°C to +200°C junction temperature, with thermal resistance of 195 °C/W junction-to-ambient and 50 °C/W junction-to-case. It meets MIL-PRF-19500/290 qualification standards and is available in a RoHS-compliant version. The part features a current gain (hFE) of 40 to 175 at 1.0 mA collector current and 10 V collector-emitter voltage, with turn-on time of 45 ns and turn-off time of 300 ns.