Microsemi Corp. Bipolar Transistors - BJT JAN2N2904/TR

The JAN2N2904/TR is a PNP silicon switching transistor, qualified to the JAN military level per MIL-PRF-19500/290, housed in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap. It has a maximum collector-emitter voltage of 40 V, collector-base voltage of 60 V, emitter-base voltage of 5.0 V, and a continuous collector current of 600 mA. Power dissipation is 300 mW at 25 °C case temperature, with a thermal resistance junction-to-case of 50 °C/W and junction-to-ambient of 195 °C/W. The operating and storage junction temperature range is -65 to +200 °C. HFE ranges from 20 to 175 at collector currents up to 1 mA with a 10 V collector-emitter bias. The device is available in a commercial grade with RoHS-compliant options, but the JAN-level version shown is non-RoHS compliant by default.