Microsemi Corp. Bipolar Transistors - BJT Jan2N2605/TR

PNP silicon low-power transistor in TO-46 package, qualified per MIL-PRF-19500/354, with a collector-base voltage rating of 70 Vdc, collector-emitter voltage of 60 Vdc, and collector current of 30 mA. Power dissipation is 400 mW at +25°C ambient temperature. Thermal resistance junction-to-ambient is 275 °C/mW for the UB package variant. Current gain (hFE) ranges from 100 to 450 at collector current of 10 mA and collector-emitter voltage of 5 V. Collector-emitter saturation voltage is 0.3 Vdc at 10 mA collector and 500 μA base current. Operating and storage junction temperature range is -65 to +200 °C. The device meets MIL-PRF-19500/354 qualification standards.