NPN silicon low-power transistor in a TO-18 package, qualified to MIL-PRF-19500/376 with JANTXV quality level. Maximum collector-emitter voltage is 60 Vdc, collector current is 50 mAdc, and total power dissipation is 360 mW at 25°C. Thermal resistance from ambient to case is 350 °C/W. Operating and storage junction temperature ranges from -65 to +200 °C. Forward current transfer ratio (hFE) ranges from 225 to 800 at 10 mA collector current and 5 V collector-emitter voltage.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jan2N2484UB/TR |
| Product Name | Bipolar Transistors - BJT |
