NPN silicon low-power transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 60 Vdc, collector current of 50 mAdc, and total power dissipation of 360 mW at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Thermal resistance from ambient to case is 275 °C/W. Qualified to MIL-PRF-19500/376. Forward current transfer ratio ranges from 45 to 800 depending on bias conditions.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | JAN2N2484UA/TR |
| Product Name | Bipolar Transistors - BJT |
