Microsemi Corp. Bipolar Transistors - BJT Jan2N2369AUB/TR

NPN silicon transistor for high-frequency switching applications, housed in a TO-46 (TO-206AB) package. It has a collector-emitter voltage rating of 15 Vdc, a collector-base voltage rating of 40 Vdc, and an emitter-base voltage rating of 4.5 Vdc. The device operates from a junction temperature range of -65 to +200°C with a power dissipation of 0.36 W at 25°C, derating at 2.06 mW/°C above that temperature. Thermal resistance from ambient to case is 400 °C/W. The minimum DC current gain is 40 at 10 mA collector current, and the collector-emitter saturation voltage is 0.20 V at 10 mA collector and 1 mA base current. It meets MIL-PRF-19500/317 qualification standards.