Microsemi Corp. Bipolar Transistors - BJT JAN2N2369A/TR

NPN silicon transistor for high-reliability applications, qualified to MIL-PRF-19500/317 and available in TO-18 package. Collector-emitter voltage rating is 15 Vdc, collector-base voltage is 40 Vdc, and emitter-base voltage is 4.5 Vdc. Maximum power dissipation is 0.36 W at 25°C with thermal resistance of 400°C/W. Current gain (hFE) ranges from 20 to 120 over collector currents of 10 mA to 100 mA. Collector-emitter saturation voltage is 0.20 V at 10 mA collector current and 1 mA base current. Turn-on and turn-off times are 12 µs and 18 µs respectively. Operates from -65°C to +200°C junction temperature.