JAN2N2222AUB is a radiation-hardened NPN silicon switching transistor in a 4-pin surface mount ceramic package with a ceramic lid. It is rated for a collector-emitter voltage of 50 Vdc, a collector current of 800 mAdc, and a total power dissipation of 0.50 W. The operating and storage junction temperature range is -65°C to +200°C. It has a thermal resistance junction-to-ambient of 325°C/W. The device meets MIL-PRF-19500/255 qualification and is rated for 100 krad(Si) radiation hardness. The collector is internally connected to the case, and pin assignments are base, emitter, collector, and shielding connected to the lid.
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 Product overview: JAN2N2222AUB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N2222AUB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JAN2N2222AUB |
| Product Name | 0.8A 50V Bipolar Transistor |
| IC(max) | 800 milliamps |
