Microsemi Corp. Bipolar Transistors - BJT Jan2N2222AUB/TR

NPN silicon switching transistor in a TO-18 case for high-reliability applications, qualified to MIL-PRF-19500/255. The device has a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. The thermal resistance junction-to-ambient is 325 °C/W. The collector is internally connected to the case, and the part is available with ceramic lid and hermetic sealing. Electrical parameters include forward current transfer ratio (hFE) from 100 to 300 at 150 mA collector current, collector-emitter saturation voltage of 0.3 V at 150 mA collector and 15 mA base current, and turn-off time of 300 μs. The transistor has an operating and storage junction temperature range from -65°C to +200°C.