NPN silicon switching transistor in a TO-18 package with a 50 V collector-emitter voltage rating, 800 mA collector current capability, and 0.5 W power dissipation at 25°C. Junction temperature range is -65°C to +200°C. Thermal resistance junction-to-ambient is 325°C/W. Qualified per MIL-PRF-19500/255. Includes emitter, base, and collector leads with the collector internally connected to the case.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jan2N2222AL |
| Product Name | Bipolar Transistors - BJT |
