NPN silicon switching transistor in TO-18 package, designed for general-purpose switching applications. It has a Collector-Emitter voltage rating of 50 Vdc, Collector-Base voltage of 75 Vdc, and maximum collector current of 800 mAdc. Power dissipation is rated at 0.5 W at +25°C with a thermal resistance of 325 °C/W. The device operates over a junction temperature range of -65 to +200°C and meets MIL-PRF-19500/255 qualification standards. The TO-18 case has three leads with emitter, base, and collector connections as defined by the standard pinout.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jan2N2222AL/TR |
| Product Name | Bipolar Transistors - BJT |
