Microsemi Corp. Bipolar Transistors - BJT Jan2N2222A

NPN silicon switching transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is from -65°C to +200°C. Qualified per MIL-PRF-19500/255. Thermal resistance junction-to-ambient is 325°C/W. Forward current transfer ratio ranges from 50 to 325 depending on collector current. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current, and 1.0 V at 500 mA collector current and 50 mA base current. Turn-on time is 35 μs and turn-off time is 300 μs.