Microsemi Corp. Bipolar Transistors - BJT Jan2N2222A/TR

NPN silicon switching transistor in a TO-18 (TO-206AA) package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Thermo-physical characteristics include a junction-to-ambient thermal resistance of 325°C/W. Meets MIL-PRF-19500/255 qualification standards. The variant is part of a series with multiple package and quality level options, including JANTX and JANS designations, but the specific electrical parameters for the Jan2N2222A/TR variant are not individually detailed beyond the common series specifications.