Microsemi Corp. Bipolar Transistors - BJT Jan2N2221AUB/TR

NPN silicon switching transistor in a TO-18 (TO-206AA) package, qualified per MIL-PRF-19500/255 at JANS quality level, with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. Thermal resistance junction-to-ambient is 325 °C/W. Features a DC current gain range of 40 to 300 depending on collector current, collector-emitter saturation voltage of up to 1.0 V at 500 mA collector current, and switching times of 35 μs turn-on and 300 μs turn-off. The collector is internally connected to the case.