Microsemi Corp. Bipolar Transistors - BJT Jan2N2221AUA

NPN silicon switching transistor in a TO-18 (TO-206AA) package with 3 pins, designed for general-purpose switching applications. It has a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at +25°C. The transistor meets MIL-PRF-19500/255 qualification standards. Thermal resistance junction-to-ambient is 210 °C/W. Minimum current gain (hFE) is 40 at 10 mA collector current and 10 V collector-emitter voltage. Turn-on time is 35 µs and turn-off time is 300 µs. Operating and storage junction temperature range is -65°C to +200°C.