Microsemi Corp. Bipolar Transistors - BJT Jan2N2221A

NPN silicon switching transistor in a TO-18 package, designed for general-purpose switching applications, with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at 25°C. The device meets MIL-PRF-19500/255 qualification standards and operates across a junction temperature range of -65°C to +200°C. Thermal resistance from junction to ambient is 325 °C/W for this variant. Pinout is confirmed as emitter, base, collector for the 3-pin configuration, with collector internally connected to the case.