Microsemi Corp. Bipolar Transistors - BJT Jan2N2221A/TR

NPN silicon switching transistor in TO-18 package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. The device meets MIL-PRF-19500/255 qualification standards with an operating and storage junction temperature range of -65 to +200°C. Thermal resistance junction-to-ambient is 325 °C/W. Electrical characteristics include a minimum DC current gain of 30 at 10 mA collector current and saturation voltages of 0.3 V at 150 mA collector current and 1.0 V at 500 mA. Switching times are 35 μs turn-on and 300 μs turn-off. The part is available in JANTX, JANTXV, and JANS levels with variants including ceramic lid and leaded configurations.