Microsemi Corp. Bipolar Transistors - BJT Jan2N2219AL/TR

NPN silicon switching transistor in TO-39 package, qualified per MIL-PRF-19500/251, with a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and maximum collector current of 800 mA. The device has a thermal resistance junction-to-case of 59 °C/W and operates over a junction temperature range of -55 to +200 °C. Minimum current gain (hFE) is 50 at 1.0 mA collector current and 100 at 10 mA collector current, with a collector-emitter saturation voltage of 0.3 Vdc at 150 mA collector current and 15 mA base current. Switching times are 35 µs for turn-on and 300 µs for turn-off. The collector is internally connected to the case.