Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JAN2N2219A JAN2N2219A

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191377-JAN2N2219A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 800mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 800mW
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1191377-JAN2N2219A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 800mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 800mW
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TRANSISTORS - Transistors (BJT) - Single - JAN2N2219A - 1191377-JAN2N2219A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - JAN2N2219A
1191377-JAN2N2219A
TRANSISTORS - Transistors (BJT) - Single - JAN2N2219A 1191377-JAN2N2219A
Manufacturer: Microsemi Corporation Win Source Part Number: 1191377-JAN2N2219A Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Temperature Range - Operating: -55°C ~ 200°C Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Current - Collector (Ic) (Maximum): 800mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 10nA Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V Maximum Power: 800mW

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191377-JAN2N2219A
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Temperature Range - Operating: -55°C ~ 200°C
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Current - Collector (Ic) (Maximum): 800mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 10nA
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 50mA, 500mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 150mA, 10V
Maximum Power: 800mW

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Singapore, Singapore
0.8A 50V Bipolar Transistor
2087-JAN2N2219A
0.8A 50V Bipolar Transistor 2087-JAN2N2219A
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Product overview: JAN2N2219A from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N2219A can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Product overview: JAN2N2219A from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N2219A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1191377-JAN2N2219A 2087-JAN2N2219A
Product Name TRANSISTORS - Transistors (BJT) - Single - JAN2N2219A 0.8A 50V Bipolar Transistor
Polarity NPN
Package Type TO-3; TO-39; SOT3
Packing Method Bulk; Bulk
IC(max) 1.00E-5 milliamps 800 milliamps
Power Gain 100 dB
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