Microsemi Corp. Bipolar Transistors - BJT Jan2N2219A/TR

NPN silicon switching transistor for use in general-purpose applications, housed in a TO-39 package measuring 8.51 mm to 9.40 mm in height and 7.75 mm to 8.51 mm in diameter. It has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and emitter-base voltage of 6.0 Vdc, with a maximum collector current of 800 mA and total power dissipation of 3.0 W at +25°C. Thermal resistance from junction to case is 59 °C/W. Minimum current gain (hFE) is 35 at 1.0 mA collector current and 100 at 10 mA collector current. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 1.0 Vdc at 500 mA collector current. Base-emitter saturation voltage is 0.6 Vdc at 150 mA collector current and 2.0 Vdc at 500 mA collector current. Turn-on time is 35 μs, and turn-off time is 300 μs. Qualified to MIL-PRF-19500/251.