Microsemi Corp. Bipolar Transistors - BJT Jan2N2218AL/TR

The Jan2N2218AL/TR is an NPN silicon switching transistor in a TO-39 package, qualified to MIL-PRF-19500/251 JANTXV level. It has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and emitter-base voltage of 6.0 Vdc, with a maximum collector current of 800 mA. Power dissipation at +25°C is 3.0 W, and junction temperature ranges from -55°C to +200°C. Thermal resistance junction-to-case is 59 °C/W. Forward current gain ranges from 30 to 150 at collector currents up to 150 mA, with collector-emitter saturation voltage max of 0.3 V at 150 mA collector and 15 mA base current. Base-emitter saturation voltage is max 1.2 V under the same conditions. Switching turn-on time is 35 ns and turn-off time is 300 ns. The collector is internally connected to the case.