Microsemi Corp. Bipolar Transistors - BJT Jan2N2218/TR

The Jan2N2218/TR is an NPN silicon switching transistor qualified per MIL-PRF-19500/251, housed in a TO-39 package with overall dimensions of 8.51 mm maximum height and 7.75 mm maximum body diameter. It has a collector-emitter voltage rating of 30 Vdc, collector current of 800 mA, and total power dissipation of 3.0 W at +25°C. Thermal resistance from junction to case is 59 °C/W. Electrical characteristics include a minimum current gain (hFE) of 35 at 10 mA collector current and a collector-emitter saturation voltage of 0.4 Vdc at 150 mA collector and 15 mA base current. The device operates over a junction temperature range of -55°C to +200°C and meets MIL-PRF-19500/251 military specifications.