Microsemi Corp. Bipolar Transistors - BJT Jan2N2060L/TR

The Jan2N2060L/TR is a unitized dual NPN silicon transistor qualified to MIL-PRF-19500/270 JANTX level, housed in a TO-78 package. It has a collector-emitter voltage rating of 60 Vdc, a collector-base voltage of 100 Vdc, and a maximum collector current of 500 mAdc. Power dissipation is 600 mW for both sections at +25°C, with derating of 3.48 mW/°C above that temperature. The junction and storage temperature range is -65 to +200°C. Current gain ranges from 30 to 90 at 100 mA collector current and 5 V collector-emitter voltage, with collector-emitter saturation voltage under 0.3 V at 50 mA collector and 5 mA base current. Input and output capacitances are 85 pF and 15 pF respectively under specified conditions.