JAN2N1485 is a high-frequency, epitaxial planar NPN silicon transistor in a hermetically sealed TO-8 package, designed for medium power switching and amplification in high-reliability applications. It has a collector-emitter voltage rating of 55V, a collector current of 3.0A, and a total power dissipation of 1.75W at 25°C ambient temperature. The device operates from -65°C to +200°C junction temperature and meets MIL-PRF-19500/180 JAN qualification standards. The package features a kovar base with nickel cap and alloy 52 terminals with hot solder dip plating. Electrical characteristics include a forward current transfer ratio (hFE) of 35 to 100 at IC = 750mA and VCE = 4.0V, and a collector-emitter saturation voltage of 0.75V at IC = 750mA and IB = 40mA. Output capacitance is 400pF at 10V, and turn-on time plus turn-off time is 25µs under specified test conditions.
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN Product overview: JAN2N1485 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 40V. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 40V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N1485 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JAN2N1485 |
| Product Name | 3A 40V Bipolar Transistor |
| IC(max) | 3000 milliamps |
