The JAN2N1482 is a military-qualified NPN silicon power transistor in a TO-5 package, designed for high-reliability applications requiring low-power, high-frequency switching. It features a collector-emitter voltage rating of 55 V, a collector current of 1.5 A, and a total power dissipation of 1.0 W at +25 °C. The transistor has a thermal resistance junction-to-case of 35 °C/W and operates within a junction and storage temperature range of -65 to +200 °C. The case is hermetically sealed with a steel base and nickel cap, and the leads are gold-plated kovar. The part is qualified per MIL-S-19500/207 and is available in RoHS-compliant versions for commercial use.
Small Signal Bipolar Transistor, 1.5A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Product overview: JAN2N1482 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.5A, 55V. Search-friendly keywords include transistor, BJT, switching, amplification, 1.5A, 55V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JAN2N1482 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JAN2N1482 |
| Product Name | 1.5A 55V Bipolar Transistor |
| Polarity | NPN |
| IC(max) | 1500 milliamps |
| VCEO | 55 volts |
