Win Source Part Number: 1219496-JAN2N1016D
Category: Discrete Semiconductor Products>Transistors
Series: Military, MIL-PRF-19500/102
Package: Bulk
Standard Package: 1
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 200 V
Current - Collector (Ic) (Max): 7.5 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 7.5A, 4V
Supplier Device Package: TO-82
Temperature Range - Operating: -65°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microsemi Corporation
Other Names: 1086-16072-MIL,150-J
Base Product Number: 2N1016
RoHS Status: RoHS non-compliant
TRANS NPN 200V 7.5A TO82
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1219496-JAN2N1016D | JAN2N1016D |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | |
| Package Type | SOT3 | |
| IC(max) | 7500 milliamps | ? to 5000 milliamps |
| Power Gain | 6 dB |
