Microsemi Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF DME375A

Manufacturer: Microsemi Corporation
Win Source Part Number: 1325053-DME375A
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Packaging: Bulk
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 375W
Voltage - Collector Emitter Breakdown (Max): 55V
Current - Collector (Ic) (Max): 30A
Gain: 6.5dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Supplier Device Package: 55AW
Temperature Range - Operating: 200°C (TJ)
Case / Package: 55AW
ECCN: EAR99
Fake Threat In the Open Market: 67
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: DME375A-ND,150-DME375A
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Trans RF BJT NPN 55V 30A 3-Pin Case 55AW-1 Product overview: DME375A from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A. Search-friendly keywords include transistor, BJT, switching, amplification, 55V, 30A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-DME375A can be used for catalog matching and distributor lookup.