Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT9M100B APT9M100B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146918-APT9M100B Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Family Name: APT9M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2605pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 335W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 5A, 10V Alternative Parts (Cross-Reference): STW8NB100; STW7NA100; STW12NK95Z; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146918-APT9M100B Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Family Name: APT9M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2605pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 335W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 5A, 10V Alternative Parts (Cross-Reference): STW8NB100; STW7NA100; STW12NK95Z; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT9M100B - 1146918-APT9M100B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT9M100B
1146918-APT9M100B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT9M100B 1146918-APT9M100B
Manufacturer: Microsemi Corporation Win Source Part Number: 1146918-APT9M100B Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Family Name: APT9M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2605pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 335W (Tc) Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 5A, 10V Alternative Parts (Cross-Reference): STW8NB100; STW7NA100; STW12NK95Z; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146918-APT9M100B
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Family Name: APT9M100B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-247 [B]
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2605pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 335W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.4 Ohm @ 5A, 10V
Alternative Parts (Cross-Reference): STW8NB100; STW7NA100; STW12NK95Z;
Introduction Date: January 09, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146918-APT9M100B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT9M100B
PD 335000 milliwatts
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