Manufacturer: Microsemi Corporation
Win Source Part Number: 199265-APT94N65B2C3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 833W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: T-MAX [B2]
Dimension: TO-247-3 Variant
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 94A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 5.8mA
Max Gate Charge: 580nC @ 10V
Max Input Capacitance: 13940pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 mOhm @ 47A, 10V
Alternative Parts (Cross-Reference): IPW65R019C7; STY139N65M5; STW78N65M5;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET FG, MOSFET, 600V, 47 AMPS, TO-247 T-MAX
MOSFET N-CH 650V 94A T-MAX
| Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 199265-APT94N65B2C3G | APT94N65B2C3G | APT94N65B2C3G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT94N65B2C3G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 650 volts | ||
| PD | 833000 milliwatts |
