Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B APT8M100B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146915-APT8M100B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: APT8M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 290W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT); Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146915-APT8M100B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: APT8M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 290W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT); Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B - 1146915-APT8M100B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B
1146915-APT8M100B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B 1146915-APT8M100B
Manufacturer: Microsemi Corporation Win Source Part Number: 1146915-APT8M100B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: APT8M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 290W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT); Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146915-APT8M100B
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Family Name: APT8M100B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-247 [B]
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 290W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V
Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT);
Introduction Date: January 09, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 1000V, TO-247

MOSFET FG, MOSFET, 1000V, TO-247

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146915-APT8M100B APT8M100B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B MOSFET
PD 290000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Specs
V(BR)DSS 20 volts
IDSS 10000 to 12000 milliamps
Package Type Surface Mount
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPS1100DRG4 - 213295-TPS1100DRG4 - Win Source Electronics
Specs
Polarity P-Channel; P-Channel
V(BR)DSS 15 volts
PD 791 milliwatts
View Details
EVICES, INC. QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110902PAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement; Precision Enhancement Mode
V(BR)DSS 10 volts
View Details
3 suppliers
N-channel TrenchMOS standard level FET - BUK78150-55A/CUX - Nexperia B.V.
Specs
Package Type SOT223; SOT223
Transistor Grade / Operating Range Automotive
View Details
6 suppliers