Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B APT8M100B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146915-APT8M100B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: APT8M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 290W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT); Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146915-APT8M100B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: APT8M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 290W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT); Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B - 1146915-APT8M100B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B
1146915-APT8M100B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B 1146915-APT8M100B
Manufacturer: Microsemi Corporation Win Source Part Number: 1146915-APT8M100B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Family Name: APT8M100B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-247 [B] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 290W (Tc) Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT); Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146915-APT8M100B
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Family Name: APT8M100B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-247 [B]
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1885pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 290W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.8 Ohm @ 4A, 10V
Alternative Parts (Cross-Reference): 2SK1365F; 2SK1365; 2SK1365(LBMAT);
Introduction Date: January 09, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 1000V, TO-247

MOSFET FG, MOSFET, 1000V, TO-247

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146915-APT8M100B APT8M100B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8M100B MOSFET
PD 290000 milliwatts
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