Microsemi Corp. MOSFET APT8075BVRG

The APT8075BVRG is an N-channel enhancement mode power MOSFET in a TO-247 package, designed for high-voltage switching applications. It has a drain-source voltage rating of 800 V and a continuous drain current of 12 A at 25°C. The on-state resistance is 0.75 Ω at V_GS = 10 V and I_D = 6 A. The device is avalanche rated with single pulse energy of 960 mJ and repetitive avalanche current of 12 A. It complies with RoHS standards and features a gate-source voltage range of -30 V continuous and -40 V transient. The thermal resistance from junction to case is 0.48 °C/W. The package dimensions conform to the standard TO-247 outline, with lead spacing and mounting details specified for board layout compatibility.