Manufacturer: Microsemi Corporation
Win Source Part Number: 1018121-APT8075BN
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 2950pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
MOSFET N-CH 800V 13A TO247AD
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1018121-APT8075BN | APT8075BN |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT8075BN | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 800 volts | |
| PD | 310000 milliwatts |
