Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT7F80K APT7F80K

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051484-APT7F80K Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 500μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1335pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051484-APT7F80K Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 500μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1335pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Suppliers

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Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT7F80K - 051484-APT7F80K - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT7F80K
051484-APT7F80K
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT7F80K 051484-APT7F80K
Manufacturer: Microsemi Corporation Win Source Part Number: 051484-APT7F80K Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 225W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 [K] Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5V @ 500μA Max Gate Charge: 43nC @ 10V Max Input Capacitance: 1335pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 051484-APT7F80K
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 [K]
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5V @ 500μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1335pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT7F80K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT7F80K
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT7F80K
MOSFET N-CH 800V 7A TO220

MOSFET N-CH 800V 7A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 051484-APT7F80K APT7F80K
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT7F80K Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts
PD 225000 milliwatts
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