Manufacturer: Microsemi Corporation
Win Source Part Number: 051483-APT6M100K
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 225W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 [K]
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V (1kV)
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1410pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 3A, 10V
Alternative Parts (Cross-Reference): STP6N95K5; IPP90R1K0C3XK; IPP90R1K0C3XKSA1; APT6M100K;
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 1000V 6A TO220
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 051483-APT6M100K | APT6M100K |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6M100K | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 1000 volts | |
| PD | 225000 milliwatts |
