Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT66M60L APT66M60L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146885-APT66M60L Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Family Name: APT66M60L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13190pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 33A, 10V Alternative Parts (Cross-Reference): IXFK64N60P3; STW36N55M5; R6535ENZVC8; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146885-APT66M60L Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Family Name: APT66M60L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13190pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 33A, 10V Alternative Parts (Cross-Reference): IXFK64N60P3; STW36N55M5; R6535ENZVC8; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT66M60L - 1146885-APT66M60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT66M60L
1146885-APT66M60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT66M60L 1146885-APT66M60L
Manufacturer: Microsemi Corporation Win Source Part Number: 1146885-APT66M60L Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Family Name: APT66M60L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 13190pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 33A, 10V Alternative Parts (Cross-Reference): IXFK64N60P3; STW36N55M5; R6535ENZVC8; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146885-APT66M60L
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Family Name: APT66M60L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-264 [L]
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 13190pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1135W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): IXFK64N60P3; STW36N55M5; R6535ENZVC8;
Introduction Date: January 09, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146885-APT66M60L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT66M60L
PD 1.14E6 milliwatts
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