Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2LLG APT60M75L2LLG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1018099-APT60M75L2LL G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 893W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 264 MAX [L2] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 73A (Tc) Gate-Source Threshold Voltage: 5V @ 5mA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 8930pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 75 mOhm @ 36.5A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1018099-APT60M75L2LL G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 893W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 264 MAX [L2] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 73A (Tc) Gate-Source Threshold Voltage: 5V @ 5mA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 8930pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 75 mOhm @ 36.5A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2LLG - 1018099-APT60M75L2LLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2LLG
1018099-APT60M75L2LLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2LLG 1018099-APT60M75L2LLG
Manufacturer: Microsemi Corporation Win Source Part Number: 1018099-APT60M75L2LL G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 893W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 264 MAX [L2] Dimension: TO-264-3, TO-264AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 73A (Tc) Gate-Source Threshold Voltage: 5V @ 5mA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 8930pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 75 mOhm @ 36.5A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1018099-APT60M75L2LLG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 893W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 264 MAX [L2]
Dimension: TO-264-3, TO-264AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 73A (Tc)
Gate-Source Threshold Voltage: 5V @ 5mA
Max Gate Charge: 195nC @ 10V
Max Input Capacitance: 8930pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 75 mOhm @ 36.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1018099-APT60M75L2LLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2LLG
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 893000 milliwatts
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