Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2FLLG APT60M75L2FLLG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768710-APT60M75L2FLL G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Family Name: APT60M75L2FLL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 264 MAX [L2] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 5mA Gate Charge (Qg) (Maximum) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8930pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 893W (Tc) Rds On (Maximum) @ Id, Vgs: 75 mOhm @ 36.5A, 10V Alternative Parts (Cross-Reference): IXFB70N60Q2; APT60M80L2VR; APT60M80L2VRG; APT60M75L2FLLG; IXFB82N60Q3; IXFB82N60P; STW47NM60; Introduction Date: September 24, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 768710-APT60M75L2FLL G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Family Name: APT60M75L2FLL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 264 MAX [L2] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 5mA Gate Charge (Qg) (Maximum) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8930pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 893W (Tc) Rds On (Maximum) @ Id, Vgs: 75 mOhm @ 36.5A, 10V Alternative Parts (Cross-Reference): IXFB70N60Q2; APT60M80L2VR; APT60M80L2VRG; APT60M75L2FLLG; IXFB82N60Q3; IXFB82N60P; STW47NM60; Introduction Date: September 24, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2FLLG - 768710-APT60M75L2FLLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2FLLG
768710-APT60M75L2FLLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2FLLG 768710-APT60M75L2FLLG
Manufacturer: Microsemi Corporation Win Source Part Number: 768710-APT60M75L2FLL G Series: POWER MOS 7 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Family Name: APT60M75L2FLL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: 264 MAX [L2] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 5mA Gate Charge (Qg) (Maximum) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8930pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 893W (Tc) Rds On (Maximum) @ Id, Vgs: 75 mOhm @ 36.5A, 10V Alternative Parts (Cross-Reference): IXFB70N60Q2; APT60M80L2VR; APT60M80L2VRG; APT60M75L2FLLG; IXFB82N60Q3; IXFB82N60P; STW47NM60; Introduction Date: September 24, 2001 ECCN: EAR99 Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 768710-APT60M75L2FLLG
Series: POWER MOS 7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Family Name: APT60M75L2FLL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: 264 MAX [L2]
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 5mA
Gate Charge (Qg) (Maximum) @ Vgs: 195nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8930pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 893W (Tc)
Rds On (Maximum) @ Id, Vgs: 75 mOhm @ 36.5A, 10V
Alternative Parts (Cross-Reference): IXFB70N60Q2; APT60M80L2VR; APT60M80L2VRG; APT60M75L2FLLG; IXFB82N60Q3; IXFB82N60P; STW47NM60;
Introduction Date: September 24, 2001
ECCN: EAR99
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 768710-APT60M75L2FLLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT60M75L2FLLG
PD 893000 milliwatts
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