Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M50B2 APT56M50B2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1018082-APT56M50B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 780W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 100 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1018082-APT56M50B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 780W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 100 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M50B2 - 1018082-APT56M50B2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M50B2
1018082-APT56M50B2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M50B2 1018082-APT56M50B2
Manufacturer: Microsemi Corporation Win Source Part Number: 1018082-APT56M50B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 780W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 220nC @ 10V Max Input Capacitance: 8800pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 100 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1018082-APT56M50B2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 780W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: T-MAX
Dimension: TO-247-3 Variant
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 5V @ 2.5mA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 8800pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 100 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 1

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Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 500V, TO-247 T-MAX

MOSFET FG, MOSFET, 500V, TO-247 T-MAX

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1018082-APT56M50B2 APT56M50B2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT56M50B2 MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 780000 milliwatts
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