Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5518BFLLG APT5518BFLLG

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199260-APT5518BFLLG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 403W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 3286pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 15.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199260-APT5518BFLLG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 403W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 3286pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 15.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5518BFLLG - 199260-APT5518BFLLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5518BFLLG
199260-APT5518BFLLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5518BFLLG 199260-APT5518BFLLG
Manufacturer: Microsemi Corporation Win Source Part Number: 199260-APT5518BFLLG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 403W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 67nC @ 10V Max Input Capacitance: 3286pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 15.5A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: Microsemi Corporation
Win Source Part Number: 199260-APT5518BFLLG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 403W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 67nC @ 10V
Max Input Capacitance: 3286pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 15.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT5518BFLLG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT5518BFLLG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT5518BFLLG
MOSFET N-CH 550V 31A TO247-3

MOSFET N-CH 550V 31A TO247-3

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 199260-APT5518BFLLG APT5518BFLLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT5518BFLLG Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 550 volts
PD 403000 milliwatts
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