Microsemi Corp. N-Channel 67A 500V 0.065ohm MOSFET Transistor APT50M65B2LLG

Power Field-Effect Transistor, 67A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Product overview: APT50M65B2LLG from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 67A, 500V, 0.065ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 67A, 500V, 0.065ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT50M65B2LLG can be used for catalog matching and distributor lookup.

Manufacturer: Microsemi Corporation
Win Source Part Number: 768703-APT50M65B2LLG
Series: POWER MOS 7
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Family Name: APT50M65B2LL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 141nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 7010pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 694W (Tc)
Rds On (Maximum) @ Id, Vgs: 65 mOhm @ 33.5A, 10V
Alternative Parts (Cross-Reference): IXFX80N50P; STW45NM50FD; STW45NM50; IXFX80N50Q3;
Introduction Date: March 12, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 30