Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80B2 APT48M80B2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146787-APT48M80B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Family Name: APT48M80B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9330pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): STW23N85K5; STW18NM80; IXFX44N80P; Introduction Date: October 30, 2007 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146787-APT48M80B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Family Name: APT48M80B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9330pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): STW23N85K5; STW18NM80; IXFX44N80P; Introduction Date: October 30, 2007 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80B2 - 1146787-APT48M80B2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80B2
1146787-APT48M80B2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80B2 1146787-APT48M80B2
Manufacturer: Microsemi Corporation Win Source Part Number: 1146787-APT48M80B2 Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Family Name: APT48M80B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9330pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 24A, 10V Alternative Parts (Cross-Reference): STW23N85K5; STW18NM80; IXFX44N80P; Introduction Date: October 30, 2007 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146787-APT48M80B2
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Family Name: APT48M80B2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 9330pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1135W (Tc)
Rds On (Maximum) @ Id, Vgs: 190 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): STW23N85K5; STW18NM80; IXFX44N80P;
Introduction Date: October 30, 2007
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 800V, TO-247 T-MAX

MOSFET FG, MOSFET, 800V, TO-247 T-MAX

Buy Now Datasheet

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146787-APT48M80B2 APT48M80B2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT48M80B2 MOSFET
PD 1.14E6 milliwatts
Unlock Full Specs
to access all available technical data