Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT37M100B2 APT37M100B2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146762-APT37M100B2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Family Name: APT37M100B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9835pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 330 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; STW22N95K5; STW21N90K5; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146762-APT37M100B2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Family Name: APT37M100B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9835pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 330 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; STW22N95K5; STW21N90K5; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT37M100B2 - 1146762-APT37M100B2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT37M100B2
1146762-APT37M100B2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT37M100B2 1146762-APT37M100B2
Manufacturer: Microsemi Corporation Win Source Part Number: 1146762-APT37M100B2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Variant Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Family Name: APT37M100B2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: T-MAX [B2] Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 9835pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 1135W (Tc) Rds On (Maximum) @ Id, Vgs: 330 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): IXFK30N100Q2SN; STW22N95K5; STW21N90K5; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146762-APT37M100B2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3 Variant
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Family Name: APT37M100B2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: T-MAX [B2]
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 305nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 9835pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 1135W (Tc)
Rds On (Maximum) @ Id, Vgs: 330 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): IXFK30N100Q2SN; STW22N95K5; STW21N90K5;
Introduction Date: January 09, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Quantity per package: 1

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Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 1000V, TO-247 T-MAX

MOSFET FG, MOSFET, 1000V, TO-247 T-MAX

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146762-APT37M100B2 APT37M100B2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT37M100B2 MOSFET
PD 1.14E6 milliwatts
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