Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT34N80B2C3G APT34N80B2C3G

Manufacturer: Microsemi Corporation Win Source Part Number: 1018038-APT34N80B2C3 G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX [B2] Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 3.9V @ 2mA Max Gate Charge: 355nC @ 10V Max Input Capacitance: 4510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 145 mOhm @ 22A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Quantity per package: 1