Microsemi Corp. Transistor APT30M85BVRG

Description
TRANSISTOR, MOSFET 40A 300V TO-247. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet
Description
TRANSISTOR, MOSFET 40A 300V TO-247. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Transistor - 53817674 - Radwell International
Willingboro, NJ, United States
Transistor
53817674
Transistor 53817674
TRANSISTOR, MOSFET 40A 300V TO-247. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET 40A 300V TO-247. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M85BVRG - 1018029-APT30M85BVRG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M85BVRG
1018029-APT30M85BVRG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M85BVRG 1018029-APT30M85BVRG
Manufacturer: Microsemi Corporation Win Source Part Number: 1018029-APT30M85BVRG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 195nC @ 10V Max Input Capacitance: 4950pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 1018029-APT30M85BVRG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 195nC @ 10V
Max Input Capacitance: 4950pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 85 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Quantity per package: 1

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET FG, MOSFET, 300V, TO-247, RoHS

MOSFET FG, MOSFET, 300V, TO-247, RoHS

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Technical Specifications

  Radwell International Win Source Electronics VAST STOCK CO., LIMITED
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 53817674 1018029-APT30M85BVRG APT30M85BVRG
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M85BVRG MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 300 volts
PD 300000 milliwatts
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