Microsemi Corp. MOSFET APT30M40JVFR

The APT30M40JVFR is a 300 V N-channel enhancement-mode power MOSFET with a 0.040 Ω on-state resistance, designed for high-frequency switching applications. It is packaged in the SOT-227 (ISOTOP®) case, with dimensions of 31.5 mm × 25.2 mm × 11.8 mm, and features a fast recovery body diode. The device is rated for a continuous drain current of 70 A and a pulsed drain current of 280 A, with a maximum power dissipation of 450 W and a junction temperature range of -55 °C to 150 °C. It meets UL 94 V-0 flammability standards and is 100% avalanche tested. Thermal resistance from junction to case is 0.28 °C/W, and the isolating base withstands 2500 V RMS. Maximum gate-source voltage is ±30 V continuous.