Microsemi Corp. MOSFET APT30M19JVFR

APT30M19JVFR is an N-channel enhancement mode power MOSFET designed for high-voltage switching applications, featuring a fast recovery body diode and optimized gate layout for faster switching. It is packaged in the SOT-227 (ISOTOP®) form factor, measuring 31.5 mm × 25.2 mm × 8.9 mm. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 130 A, and a maximum on-state resistance of 0.019 Ω at 10 V gate-source voltage. It supports repetitive and non-repetitive avalanche currents up to 130 A, with a single-pulse avalanche energy rating of 3600 mJ. The gate-source voltage is rated at ±30 V continuous and ±40 V transient. Operating junction temperature ranges from -55°C to 150°C. The package provides 2500 V RMS electrical isolation from the mounting base. The part meets UL 94 V-0 flammability rating and is 100% avalanche tested.