Microsemi Corp. MOSFET APT29F80J

Description
MOSFET FG, FREDFET, 800V, SOT-227
Description
MOSFET FG, FREDFET, 800V, SOT-227
Datasheet
Datasheet Summary
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APT29F80J is an 800V, N-channel FREDFET power MOSFET designed for high-reliability switching applications such as ZVS phase-shifted bridges and boost converters. It is packaged in an SOT-227 (ISOTOP®) case with dimensions of 31.5 mm × 25.2 mm × 4.8 mm and weighs 29.2 g. The device has a maximum drain-source on-resistance of 0.21 Ω at 25°C, a pulsed drain current of 173 A, and a single-pulse avalanche energy rating of 1979 mJ. It features fast switching with a reverse recovery time of 370 ns at 25°C and low gate charge of 303 nC. The part is RoHS compliant, UL recognized (file E145592), and rated for operation from -55°C to 150°C junction temperature with 2500 V RMS isolation. Thermal resistance from junction to case is 0.23 °C/W.

Datasheet Summary
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APT29F80J is an 800V, N-channel FREDFET power MOSFET designed for high-reliability switching applications such as ZVS phase-shifted bridges and boost converters. It is packaged in an SOT-227 (ISOTOP®) case with dimensions of 31.5 mm × 25.2 mm × 4.8 mm and weighs 29.2 g. The device has a maximum drain-source on-resistance of 0.21 Ω at 25°C, a pulsed drain current of 173 A, and a single-pulse avalanche energy rating of 1979 mJ. It features fast switching with a reverse recovery time of 370 ns at 25°C and low gate charge of 303 nC. The part is RoHS compliant, UL recognized (file E145592), and rated for operation from -55°C to 150°C junction temperature with 2500 V RMS isolation. Thermal resistance from junction to case is 0.23 °C/W.

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Sheung Wan, Hong Kong
MOSFET FG, FREDFET, 800V, SOT-227

MOSFET FG, FREDFET, 800V, SOT-227

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number APT29F80J
Product Name MOSFET
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