Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT28F60B APT28F60B

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051448-APT28F60B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 520W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5575pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Quantity per package: 1
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT28F60B - 051448-APT28F60B - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT28F60B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Microsemi Corporation Win Source Part Number: 051448-APT28F60B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 520W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5575pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT28F60B - 051448-APT28F60B - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT28F60B
051448-APT28F60B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT28F60B 051448-APT28F60B
Manufacturer: Microsemi Corporation Win Source Part Number: 051448-APT28F60B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 520W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 [B] Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 140nC @ 10V Max Input Capacitance: 5575pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 250 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 051448-APT28F60B
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 520W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 [B]
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 140nC @ 10V
Max Input Capacitance: 5575pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 250 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT28F60B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT28F60B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT28F60B
MOSFET N-CH 600V 30A TO247

MOSFET N-CH 600V 30A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 051448-APT28F60B APT28F60B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT28F60B Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 520000 milliwatts
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