Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT26F120B2 APT26F120B2

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199257-APT26F120B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 9670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT26F120B2 - 199257-APT26F120B2 - Win Source Electronics
    Win Source Electronics
  • Transistor - 50749242 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 199257-APT26F120B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 9670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT26F120B2 - 199257-APT26F120B2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT26F120B2
199257-APT26F120B2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT26F120B2 199257-APT26F120B2
Manufacturer: Microsemi Corporation Win Source Part Number: 199257-APT26F120B2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: T-MAX Dimension: TO-247-3 Variant Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 5V @ 2.5mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 9670pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Quantity per package: 1

Manufacturer: Microsemi Corporation
Win Source Part Number: 199257-APT26F120B2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: T-MAX
Dimension: TO-247-3 Variant
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 5V @ 2.5mA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 9670pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Buy Now Datasheet
Transistor - 50749242 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
50749242
Transistor 50749242
TRANSISTOR, N-CH 1200V 27A T-MAX. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, N-CH 1200V 27A T-MAX. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
APT26F120B2
MOSFET APT26F120B2
MOSFET FG, FREDFET, 1200V, TO-247 T-MAX

MOSFET FG, FREDFET, 1200V, TO-247 T-MAX

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 199257-APT26F120B2 50749242 APT26F120B2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT26F120B2 Transistor MOSFET
Polarity N-Channel; N-Channel
V(BR)DSS 1200 volts
PD 1.14E6 milliwatts
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