Win Source Part Number: 1027135-APT25SM120B
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 1
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 20V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 175W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 20 V
Vgs (Max): +25V, -10V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microsemi Corporation
Other Names: APT25SM120B-ND,150-A
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
SICFET N-CH 1200V 25A TO247
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Transistors | RF Transistors |
| Product Number | 1027135-APT25SM120B | APT25SM120B |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
